Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
País de Origem
China
Detalhes do produto
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
100
P.O.A.
Embalagem de Produção (Bobina)
100
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
País de Origem
China
Detalhes do produto
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.