N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E

Nº de Estoque RS: 829-0627Marca: STMicroelectronicsPart Number: PD55015-E
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Detalhes do produto

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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R$ 401,92

Each (Sem VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
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R$ 401,92

Each (Sem VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Detalhes do produto

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more