Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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R$ 255,70
R$ 25,57 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 255,70
R$ 25,57 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 40 | R$ 25,57 | R$ 255,70 |
50 - 90 | R$ 24,65 | R$ 246,50 |
100 - 240 | R$ 22,55 | R$ 225,50 |
250 - 490 | R$ 20,53 | R$ 205,30 |
500+ | R$ 19,82 | R$ 198,20 |
Documentos Técnicos
Especificações
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
País de Origem
China
Detalhes do produto
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.