N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7

Nº de Estoque RS: 168-8826Marca: STMicroelectronicsPart Number: STP240N10F7
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4.6mm

Number of Elements per Chip

1

Height

15.75mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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R$ 3.034,00

R$ 60,68 Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7

R$ 3.034,00

R$ 60,68 Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

DeepGate, STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4.6mm

Number of Elements per Chip

1

Height

15.75mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more