N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10

Nº de Estoque RS: 146-0412Marca: STMicroelectronicsPart Number: STW120NF10
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.75mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.15mm

País de Origem

China

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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R$ 1.408,80

R$ 46,96 Each (In a Tube of 30) (Sem VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10

R$ 1.408,80

R$ 46,96 Each (In a Tube of 30) (Sem VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STMicroelectronics STW120NF10
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Tubo
30 - 60R$ 46,96R$ 1.408,80
90 - 480R$ 40,07R$ 1.202,10
510 - 960R$ 36,00R$ 1.080,00
990 - 4980R$ 33,91R$ 1.017,30
5010+R$ 28,96R$ 868,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

15.75mm

Typical Gate Charge @ Vgs

172 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.15mm

País de Origem

China

Detalhes do produto

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more