STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

Nº de Estoque RS: 168-7533Marca: STMicroelectronicsPart Number: STW34NM60N
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Informações de estoque temporariamente indisponíveis.

R$ 3.511,20

R$ 117,04 Each (In a Tube of 30) (Sem VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

R$ 3.511,20

R$ 117,04 Each (In a Tube of 30) (Sem VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Tubo
30 - 60R$ 117,04R$ 3.511,20
90 - 480R$ 98,48R$ 2.954,40
510 - 960R$ 88,27R$ 2.648,10
990+R$ 77,84R$ 2.335,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Detalhes do produto

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more