N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

Nº de Estoque RS: 125-0563Marca: ToshibaPart Number: TK31E60X,S1X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 129,26

R$ 64,63 Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

2

Disponível em múltiplos de 2
2R$ 129,26
4R$ 258,52
6R$ 387,78
8R$ 517,04
10R$ 480,70
12R$ 576,84
14R$ 672,98
16R$ 769,12
18R$ 865,26
20R$ 951,20
22R$ 1.046,32
24R$ 1.141,44
26R$ 1.236,56
28R$ 1.331,68
30R$ 1.426,80

R$ 129,26

R$ 64,63 Each (In a Pack of 2) (Sem VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Informações de estoque temporariamente indisponíveis.

2

Disponível em múltiplos de 2
2R$ 129,26
4R$ 258,52
6R$ 387,78
8R$ 517,04
10R$ 480,70
12R$ 576,84
14R$ 672,98
16R$ 769,12
18R$ 865,26
20R$ 951,20
22R$ 1.046,32
24R$ 1.141,44
26R$ 1.236,56
28R$ 1.331,68
30R$ 1.426,80

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
2 - 8R$ 64,63R$ 129,26
10 - 18R$ 48,07R$ 96,14
20 - 48R$ 47,56R$ 95,12
50 - 98R$ 46,79R$ 93,58
100+R$ 46,66R$ 93,32

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more