Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
País de Origem
Japan
Detalhes do produto
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
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Verifique novamente mais tarde.
R$ 195,00
R$ 19,50 Each (In a Pack of 10) (Sem VAT)
10
R$ 195,00
R$ 19,50 Each (In a Pack of 10) (Sem VAT)
10
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
País de Origem
Japan
Detalhes do produto