N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
3000
P.O.A.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
25 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products