Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Detalhes do produto
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
50
P.O.A.
Embalagem de Produção (Bobina)
50
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Detalhes do produto