Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 5,99
Each (In a Pack of 50) (Sem VAT)
Padrão
50
R$ 5,99
Each (In a Pack of 50) (Sem VAT)
Padrão
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
50 - 450 | R$ 5,99 | R$ 299,50 |
500 - 1200 | R$ 4,46 | R$ 223,00 |
1250 - 2450 | R$ 3,84 | R$ 192,00 |
2500 - 4950 | R$ 3,46 | R$ 173,00 |
5000+ | R$ 3,19 | R$ 159,50 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto