N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3

Nº de Estoque RS: 903-4484PMarca: VishayPart Number: SiHG33N60EF-GE3
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Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

600 V

Series

EF Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

98 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

20.82mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
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P.O.A.

N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

600 V

Series

EF Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

98 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

20.82mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more