Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
10
P.O.A.
Embalagem de Produção (Bobina)
10
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China