Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China
Detalhes do produto
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 315,10
R$ 63,02 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 315,10
R$ 63,02 Each (In a Pack of 5) (Sem VAT)
Padrão
5
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 63,02 | R$ 315,10 |
50 - 120 | R$ 47,36 | R$ 236,80 |
125 - 245 | R$ 43,55 | R$ 217,75 |
250 - 495 | R$ 39,55 | R$ 197,75 |
500+ | R$ 36,79 | R$ 183,95 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China
Detalhes do produto