Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

Nº de Estoque RS: 178-3916Marca: Vishay SiliconixPart Number: SQJA76EP-T1_GE3
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

País de Origem

China

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R$ 192,80

R$ 19,28 Each (In a Pack of 10) (Sem VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
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R$ 192,80

R$ 19,28 Each (In a Pack of 10) (Sem VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 19,28R$ 192,80
100 - 490R$ 15,14R$ 151,40
500 - 990R$ 13,04R$ 130,40
1000+R$ 11,44R$ 114,40

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more