Infineon SRAM, CY62157EV30LL-45BVXI- 8Mbit

Nº de Estoque RS: 124-2943Marca: Cypress SemiconductorPart Number: CY62157EV30LL-45BVXI
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Documentos Técnicos

Especificações

Memory Size

8Mbit

Organisation

1M x 8 bit, 512K x 16 bit

Number of Words

512K

Number of Bits per Word

8 bit, 16bit

Maximum Random Access Time

45ns

Address Bus Width

8 bit, 16 bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

VFBGA

Pin Count

48

Dimensions

6 x 8 x 0.79mm

Maximum Operating Supply Voltage

3.6 V

Height

0.79mm

Maximum Operating Temperature

+85 °C

Length

6mm

Width

8mm

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.2 V

Detalhes do produto

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)

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P.O.A.

Infineon SRAM, CY62157EV30LL-45BVXI- 8Mbit
Selecione o tipo de embalagem

P.O.A.

Infineon SRAM, CY62157EV30LL-45BVXI- 8Mbit
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Memory Size

8Mbit

Organisation

1M x 8 bit, 512K x 16 bit

Number of Words

512K

Number of Bits per Word

8 bit, 16bit

Maximum Random Access Time

45ns

Address Bus Width

8 bit, 16 bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

VFBGA

Pin Count

48

Dimensions

6 x 8 x 0.79mm

Maximum Operating Supply Voltage

3.6 V

Height

0.79mm

Maximum Operating Temperature

+85 °C

Length

6mm

Width

8mm

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.2 V

Detalhes do produto

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more