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Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002-7-F

Nº de Estoque RS: 122-0588Marca: DiodesZetexPart Number: 2N7002-7-F
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 1.410,00

R$ 0,47 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002-7-F

R$ 1.410,00

R$ 0,47 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002-7-F
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Bobina
3000 - 3000R$ 0,47R$ 1.410,00
6000 - 12000R$ 0,47R$ 1.410,00
15000 - 27000R$ 0,43R$ 1.290,00
30000+R$ 0,38R$ 1.140,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more