Documentos Técnicos
Especificações
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
País de Origem
China
Detalhes do produto
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc

P.O.A.
Each (On a Reel of 2000) (Sem VAT)
2000
P.O.A.
Each (On a Reel of 2000) (Sem VAT)
2000
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.

Documentos Técnicos
Especificações
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
País de Origem
China
Detalhes do produto
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
