Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Detalhes do produto
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 12,10
Each (In a Pack of 20) (Sem VAT)
20
R$ 12,10
Each (In a Pack of 20) (Sem VAT)
20
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 12,10 | R$ 242,00 |
100 - 480 | R$ 10,81 | R$ 216,20 |
500 - 980 | R$ 10,68 | R$ 213,60 |
1000 - 1980 | R$ 10,54 | R$ 210,80 |
2000+ | R$ 10,46 | R$ 209,20 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Detalhes do produto