Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-523 DMG1012T-7

Nº de Estoque RS: 751-4064Marca: DiodesZetexPart Number: DMG1012T-7
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.737 nC @ 4.5 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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R$ 79,00

R$ 0,79 Each (In a Pack of 100) (Sem VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-523 DMG1012T-7
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R$ 79,00

R$ 0,79 Each (In a Pack of 100) (Sem VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-523 DMG1012T-7

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.737 nC @ 4.5 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more