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Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMG3414U-7

Nº de Estoque RS: 751-4086Marca: DiodesZetexPart Number: DMG3414U-7
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

780 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

9.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 124,50

R$ 4,98 Each (In a Pack of 25) (Sem VAT)

Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMG3414U-7
Selecione o tipo de embalagem

R$ 124,50

R$ 4,98 Each (In a Pack of 25) (Sem VAT)

Diodes Inc N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMG3414U-7
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
25 - 125R$ 4,98R$ 124,50
150 - 725R$ 3,07R$ 76,75
750 - 1475R$ 2,94R$ 73,50
1500+R$ 2,42R$ 60,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

780 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

9.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more