Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7

Nº de Estoque RS: 921-1048Marca: DiodesZetexPart Number: DMN10H220L-7
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Especificações

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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R$ 176,40

R$ 5,88 Each (In a Pack of 30) (Sem VAT)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
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R$ 176,40

R$ 5,88 Each (In a Pack of 30) (Sem VAT)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
30 - 120R$ 5,88R$ 176,40
150 - 420R$ 5,26R$ 157,80
450 - 870R$ 5,20R$ 156,00
900 - 2970R$ 5,15R$ 154,50
3000+R$ 5,09R$ 152,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em