Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B

Nº de Estoque RS: 921-1057Marca: DiodesZetexPart Number: DMN1260UFA-7B
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

12 V

Package Type

X2-DFN0806

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

0.65mm

Typical Gate Charge @ Vgs

0.96 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 278,00

R$ 2,78 Each (In a Pack of 100) (Sem VAT)

Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
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R$ 278,00

R$ 2,78 Each (In a Pack of 100) (Sem VAT)

Diodes Inc N-Channel MOSFET, 500 mA, 12 V, 3-Pin X2-DFN0806 DMN1260UFA-7B
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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Verifique novamente mais tarde.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

12 V

Package Type

X2-DFN0806

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

0.65mm

Typical Gate Charge @ Vgs

0.96 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more