Diodes Inc N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 DMN2050L-7

Nº de Estoque RS: 822-2554Marca: DiodesZetexPart Number: DMN2050L-7
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

6.7 nC @ 4.5 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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R$ 245,50

R$ 4,91 Each (In a Pack of 50) (Sem VAT)

Diodes Inc N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 DMN2050L-7
Selecione o tipo de embalagem

R$ 245,50

R$ 4,91 Each (In a Pack of 50) (Sem VAT)

Diodes Inc N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 DMN2050L-7

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
50 - 550R$ 4,91R$ 245,50
600 - 1450R$ 3,26R$ 163,00
1500+R$ 2,59R$ 129,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

6.7 nC @ 4.5 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Detalhes do produto

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more