Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
País de Origem
China
Detalhes do produto
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied as a Tape) (Sem VAT)
Padrão
25
P.O.A.
Each (Supplied as a Tape) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
25
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
País de Origem
China
Detalhes do produto


