Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7

Nº de Estoque RS: 169-0688Marca: DiodesZetexPart Number: DMN2400UV-7
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

1.33 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

1.25mm

Length

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.6mm

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 6.060,00

R$ 2,02 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7

R$ 6.060,00

R$ 2,02 Each (On a Reel of 3000) (Sem VAT)

Diodes Inc Dual N-Channel MOSFET, 1.33 A, 20 V, 6-Pin SOT-563 DMN2400UV-7
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

1.33 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

1.25mm

Length

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.6mm

País de Origem

China

Detalhes do produto

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more