Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
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R$ 0,52
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 0,52
Each (On a Reel of 3000) (Sem VAT)
3000
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Bobina |
---|---|---|
3000 - 6000 | R$ 0,52 | R$ 1.560,00 |
9000 - 12000 | R$ 0,52 | R$ 1.560,00 |
15000+ | R$ 0,52 | R$ 1.560,00 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China