Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
R$ 214,60
R$ 10,73 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 214,60
R$ 10,73 Each (In a Pack of 20) (Sem VAT)
Padrão
20
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 10,73 | R$ 214,60 |
100 - 480 | R$ 7,60 | R$ 152,00 |
500 - 980 | R$ 6,91 | R$ 138,20 |
1000 - 2480 | R$ 6,29 | R$ 125,80 |
2500+ | R$ 5,75 | R$ 115,00 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto