Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.58mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
25
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
25
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.58mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto


