Diodes Inc P-Channel MOSFET, 6.2 A, 20 V, 6-Pin U-DFN2020 DMP2066UFDE-7

Nº de Estoque RS: 770-5159PMarca: DiodesZetexPart Number: DMP2066UFDE-7
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

2.05mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.05mm

Typical Gate Charge @ Vgs

14.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.58mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Diodes Inc P-Channel MOSFET, 6.2 A, 20 V, 6-Pin U-DFN2020 DMP2066UFDE-7
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Diodes Inc P-Channel MOSFET, 6.2 A, 20 V, 6-Pin U-DFN2020 DMP2066UFDE-7

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

2.05mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.05mm

Typical Gate Charge @ Vgs

14.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.58mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more