Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMP2160U-7

Nº de Estoque RS: 751-4247Marca: DiodesZetexPart Number: DMP2160U-7
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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R$ 140,50

R$ 2,81 Each (In a Pack of 50) (Sem VAT)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMP2160U-7
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R$ 140,50

R$ 2,81 Each (In a Pack of 50) (Sem VAT)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMP2160U-7

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
50 - 550R$ 2,81R$ 140,50
600 - 1450R$ 1,36R$ 68,00
1500 - 2450R$ 1,28R$ 64,00
2500 - 4950R$ 1,25R$ 62,50
5000+R$ 1,25R$ 62,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.5 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more