Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 1,01
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 1,01
Each (On a Reel of 3000) (Sem VAT)
3000
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Bobina |
---|---|---|
3000 - 6000 | R$ 1,01 | R$ 3.030,00 |
9000 - 12000 | R$ 0,95 | R$ 2.850,00 |
15000+ | R$ 0,92 | R$ 2.760,00 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China