Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
R$ 134,30
R$ 13,43 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 134,30
R$ 13,43 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 20 | R$ 13,43 | R$ 134,30 |
| 30 - 120 | R$ 9,91 | R$ 99,10 |
| 130 - 620 | R$ 8,36 | R$ 83,60 |
| 630 - 1240 | R$ 8,15 | R$ 81,50 |
| 1250+ | R$ 8,11 | R$ 81,10 |
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalhes do produto


