Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
10
P.O.A.
Embalagem de Produção (Bobina)
10
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
País de Origem
China