Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
10
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
10
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Detalhes do produto


