Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA

Nº de Estoque RS: 669-7518Marca: DiodesZetexPart Number: ZXMP3A13FTA
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Informações de estoque temporariamente indisponíveis.

R$ 52,30

R$ 5,23 Each (In a Pack of 10) (Sem VAT)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
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R$ 52,30

R$ 5,23 Each (In a Pack of 10) (Sem VAT)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 20R$ 5,23R$ 52,30
30 - 140R$ 3,16R$ 31,60
150 - 740R$ 2,81R$ 28,10
750 - 1490R$ 2,40R$ 24,00
1500+R$ 2,02R$ 20,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more