Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole

Nº de Estoque RS: 124-1670Marca: Fairchild SemiconductorPart Number: HGTG30N60C3D
brand-logo
Ver tudo em IGBTs

Documentos Técnicos

Especificações

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

País de Origem

China

Detalhes do produto

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

P.O.A.

Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole

P.O.A.

Fairchild HGTG30N60C3D IGBT, 63 A 600 V, 3-Pin TO-247, Through Hole
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Maximum Continuous Collector Current

63 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

País de Origem

China

Detalhes do produto

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em