Fuji Electric 2MBi300U4J-120-50, M250 , N-Channel Series IGBT Module, 300 A max, 1200 V, PCB Mount

Nº de Estoque RS: 716-5583Marca: Fuji ElectricPart Number: 2MBi300U4J-120-50
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Documentos Técnicos

Especificações

Brand

Fuji Electric

Maximum Continuous Collector Current

300 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.39 kW

Package Type

M250

Configuration

Series

Mounting Type

PCB Mount

Channel Type

N

Pin Count

15

Transistor Configuration

Series

Dimensions

150 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji Electric 2MBi300U4J-120-50, M250 , N-Channel Series IGBT Module, 300 A max, 1200 V, PCB Mount

1

Disponível em múltiplos de 1
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P.O.A.

Fuji Electric 2MBi300U4J-120-50, M250 , N-Channel Series IGBT Module, 300 A max, 1200 V, PCB Mount
Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Fuji Electric

Maximum Continuous Collector Current

300 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.39 kW

Package Type

M250

Configuration

Series

Mounting Type

PCB Mount

Channel Type

N

Pin Count

15

Transistor Configuration

Series

Dimensions

150 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more