Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Nº de Estoque RS: 166-1188Marca: InfineonPart Number: 6ED003L06F2XUMA1
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Documentos Técnicos

Especificações

Output Current

420 mA

Supply Voltage

17.5V

Pin Count

28

Package Type

DSO

Fall Time

45ns

Number of Outputs

6

Rise Time

100ns

Topology

Galvanic Isolated

High and Low Sides Dependency

Independent

Number of Drivers

6

Time Delay

800ns

Bridge Type

Full Bridge

Polarity

Non-Inverting

Mounting Type

Surface Mount

País de Origem

Malaysia

Detalhes do produto

EiceDRIVER 3-Phase Gate Drive IC, Infineon

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

MOSFET & IGBT Drivers, Infineon (International Rectifier)

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P.O.A.

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

P.O.A.

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Output Current

420 mA

Supply Voltage

17.5V

Pin Count

28

Package Type

DSO

Fall Time

45ns

Number of Outputs

6

Rise Time

100ns

Topology

Galvanic Isolated

High and Low Sides Dependency

Independent

Number of Drivers

6

Time Delay

800ns

Bridge Type

Full Bridge

Polarity

Non-Inverting

Mounting Type

Surface Mount

País de Origem

Malaysia

Detalhes do produto

EiceDRIVER 3-Phase Gate Drive IC, Infineon

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

MOSFET & IGBT Drivers, Infineon (International Rectifier)

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more