Documentos Técnicos
Especificações
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
País de Origem
Malaysia
Detalhes do produto
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
1000
P.O.A.
1000
Documentos Técnicos
Especificações
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
País de Origem
Malaysia
Detalhes do produto