Infineon BFP420H6327XTSA1 NPN RF Bipolar Transistor, 60 mA, 15 V, 4-Pin SOT-343

Nº de Estoque RS: 826-8960PMarca: InfineonPart Number: BFP420H6327XTSA1
brand-logo
View all in Bipolar Transistors

Documentos Técnicos

Especificações

Transistor Type

NPN

Maximum DC Collector Current

60 mA

Maximum Collector Emitter Voltage

15 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

1.5 V

Maximum Operating Frequency

25 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Detalhes do produto

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

P.O.A.

Infineon BFP420H6327XTSA1 NPN RF Bipolar Transistor, 60 mA, 15 V, 4-Pin SOT-343
Selecione o tipo de embalagem

P.O.A.

Infineon BFP420H6327XTSA1 NPN RF Bipolar Transistor, 60 mA, 15 V, 4-Pin SOT-343
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Transistor Type

NPN

Maximum DC Collector Current

60 mA

Maximum Collector Emitter Voltage

15 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

1.5 V

Maximum Operating Frequency

25 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Detalhes do produto

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more