N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1

Nº de Estoque RS: 171-1963Marca: InfineonPart Number: BSC070N10NS5ATMA1
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Series

BSC070N10NS5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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R$ 23,12

Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
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R$ 23,12

Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
10 - 40R$ 23,12R$ 231,20
50 - 90R$ 18,79R$ 187,90
100 - 240R$ 17,87R$ 178,70
250 - 490R$ 16,91R$ 169,10
500+R$ 15,94R$ 159,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Series

BSC070N10NS5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more