Infineon OptiMOS™ 3 N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
225 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
20
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
20
Informações de estoque temporariamente indisponíveis.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
225 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products