Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1

Nº de Estoque RS: 167-942Marca: InfineonPart Number: BSP171PH6327XTSA1
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Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 111,70

R$ 11,17 Each (In a Pack of 10) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 111,70
20R$ 223,40
30R$ 335,10
40R$ 446,80
50R$ 558,50
60R$ 670,20
70R$ 781,90
80R$ 893,60
90R$ 1.005,30
100R$ 1.073,00
110R$ 1.180,30
120R$ 1.287,60
130R$ 1.394,90
140R$ 1.502,20
150R$ 1.609,50

R$ 111,70

R$ 11,17 Each (In a Pack of 10) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 111,70
20R$ 223,40
30R$ 335,10
40R$ 446,80
50R$ 558,50
60R$ 670,20
70R$ 781,90
80R$ 893,60
90R$ 1.005,30
100R$ 1.073,00
110R$ 1.180,30
120R$ 1.287,60
130R$ 1.394,90
140R$ 1.502,20
150R$ 1.609,50

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 11,17R$ 111,70
100 - 240R$ 10,73R$ 107,30
250 - 490R$ 10,70R$ 107,00
500 - 990R$ 10,13R$ 101,30
1000+R$ 9,59R$ 95,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more