Infineon FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
395 W
Package Type
34MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Detalhes do produto
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 1.703,15
Each (Sem VAT)
Padrão
1
R$ 1.703,15
Each (Sem VAT)
Padrão
1
Comprar em grandes quantidades
| Quantidade | Preço unitário |
|---|---|
| 1 - 1 | R$ 1.703,15 |
| 2 - 4 | R$ 1.642,69 |
| 5 - 9 | R$ 1.597,45 |
| 10 - 19 | R$ 1.550,11 |
| 20+ | R$ 1.464,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
395 W
Package Type
34MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Detalhes do produto
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products