Infineon FP40R12KT3GBOSA1 3 Phase Bridge IGBT Module, 55 A 1200 V, 35-Pin ECONO3, PCB Mount
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
55 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
210 W
Package Type
ECONO3
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+125 °C
Minimum Operating Temperature
-40 °C
País de Origem
China
Detalhes do produto
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 2.795,76
Each (In a Tray of 10) (Sem VAT)
10
R$ 2.795,76
Each (In a Tray of 10) (Sem VAT)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
55 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
210 W
Package Type
ECONO3
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Switching Speed
1MHz
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+125 °C
Minimum Operating Temperature
-40 °C
País de Origem
China
Detalhes do produto
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products