Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
88 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.335mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
368pF
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 237,00
R$ 23,70 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 237,00
R$ 23,70 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 40 | R$ 23,70 | R$ 237,00 |
| 50 - 90 | R$ 22,87 | R$ 228,70 |
| 100 - 240 | R$ 22,22 | R$ 222,20 |
| 250 - 490 | R$ 21,54 | R$ 215,40 |
| 500+ | R$ 20,38 | R$ 203,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
88 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.36 x 4.57 x 15.95mm
Maximum Operating Temperature
+175 °C
Energy Rating
0.335mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
368pF
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products