Infineon IKW15N120H3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.03 x 5.16 x 21.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 201,76
R$ 100,88 Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 201,76
R$ 100,88 Each (In a Pack of 2) (Sem VAT)
Padrão
2
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 2 - 18 | R$ 100,88 | R$ 201,76 |
| 20 - 48 | R$ 91,21 | R$ 182,42 |
| 50 - 98 | R$ 86,45 | R$ 172,90 |
| 100 - 198 | R$ 81,32 | R$ 162,64 |
| 200+ | R$ 77,05 | R$ 154,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.03 x 5.16 x 21.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products