Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 99,30
Each (In a Pack of 10) (Sem VAT)
10
R$ 99,30
Each (In a Pack of 10) (Sem VAT)
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 10 | R$ 99,30 | R$ 993,00 |
20 - 40 | R$ 95,82 | R$ 958,20 |
50 - 90 | R$ 93,14 | R$ 931,40 |
100 - 190 | R$ 88,32 | R$ 883,20 |
200+ | R$ 84,35 | R$ 843,50 |
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Detalhes do produto
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.