Infineon CoolMOS™ C7 N-Channel MOSFET, 10 A, 650 V, 3-Pin TO-220 FP IPA65R125C7XKSA1

Nº de Estoque RS: 215-2482Marca: InfineonPart Number: IPA65R125C7XKSA1
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Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C7

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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R$ 386,60

R$ 77,32 Each (In a Pack of 5) (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 10 A, 650 V, 3-Pin TO-220 FP IPA65R125C7XKSA1
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R$ 386,60

R$ 77,32 Each (In a Pack of 5) (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 10 A, 650 V, 3-Pin TO-220 FP IPA65R125C7XKSA1

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 5R$ 77,32R$ 386,60
10 - 20R$ 70,64R$ 353,20
25 - 45R$ 66,91R$ 334,55
50 - 120R$ 63,05R$ 315,25
125+R$ 59,89R$ 299,45

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C7

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more