N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

Nº de Estoque RS: 911-0831Marca: InfineonPart Number: IPB107N20N3GATMA1
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Series

OptiMOS

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 71,39

Each (On a Reel of 1000) (Sem VAT)

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

R$ 71,39

Each (On a Reel of 1000) (Sem VAT)

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Series

OptiMOS

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more